Semiconductor
A substance that conducts electricity is called a conductor, and a substance that does not conduct electricity is called an insulator. Semiconductors are substances with properties somewhere between them.
Semiconductor devices are installed in systems such as smartphones, computers, automobiles, and home appliances that are essential to our daily lives. Components made from specialty graphite are essential to many processes in semiconductor production.
Graphite for Semiconductor
In the semiconductor industry, graphite materials are widely used due to their excellent properties such as electrical and thermal conductivity, corrosion resistance, mechanical processing performance, and self-lubrication. Graphite products can not only improve production efficiency and product quality, but also ensure the high reliability and high performance of semiconductor devices.
Applications of graphite in semiconductor industry
Many semiconductors are made of silicon. This metalloid is grown into single crystals, sliced into thin wafers and, finally, processed into tiny micro-electric systems.
Graphite can be applies to the crystal growing or the subsequent finishing with epitaxy or ion implantation. These processes take place at very high temperatures and in extremely corrosive environments. At the same time, highest purity and absolute precision are required.
1. Graphite Parts for Simiconductor Crystal Growth
Graphite products for crystal growing hot zones, include graphite heaters, support crucibles, heat shields and insulating components.
The single crystal furnace is a flexible shaft lifting equipment used for growing single crystals using the Czochralski (CZ) method. The CZ method relies heavily on high purity graphite parts and graphite felt insulation. Many components in hot zone of single crystal furnace is made of high purity graphite.
2. Graphite Susceptors and Graphite Compoents for Silicon and Sic Epitaxy
Graphite can also be used as high-precision graphite components for wafer processing equipment like SiC-coated graphite susceptors. We produce graphite susceptors and graphite components for all current epitaxy reactors.
3. Graphite components for ion implantation
Ion implantation is a complex and sensitive process and is used in the manufacture of semiconductors. During the implantation process, dopant ions are accelerated and implanted into a monocrystalline silicon substrate to manipulate its bulk properties. Boron, phosphorous and germanium are some of the typical dopant materials.Implanter systems dope wafers with foreign atoms to modify material properties such as conductivity or crystal structure. The beam path is the center of an implanter system. Here the ions are generated, concentrated, greatly accelerated, and focused on the wafer at very high speeds.
Ideal product properties
Temperatures up to 1400°C, strong electro-magnetic fields, aggressive process gases, and high mechanical forces are a problem for regular materials. Not so with our products. Our heat resistant components made from graphite offer the ideal combination of corrosion resistance, material strength, good thermal conductivity, and absolute purity. They ensure that the ions are generated efficiently and are focused precisely on the wafer in the beam path without any impurities. Our components and spare parts made from graphite help to ensure that this process is as efficient, precise, and free of impurities as possible.
Ion Implantation Components Key Features:
Material Compatibility: Ion implantation components are crafted from materials with high purity, excellent thermal conductivity, and resistance to harsh environments.
Precision Design: Components are meticulously engineered to ensure accurate beam alignment, uniform dose distribution, and minimal scattering effects.
Wear Resistance: Ion implantation components are coated or treated to enhance wear resistance and minimize particle generation, prolonging their operational lifespan.
Temperature Control: Efficient heat dissipation methods are integrated to maintain temperature stability during ion implantation processes, ensuring consistent results.
Customization: Ion implantation components are designed to match specific equipment
4. Graphite molds for electronic packaing and sintering
Graphite mold for sintering and packaging electronic products is designed specifically for the packaging and sintering process of semiconductors and electronic products. In semiconductor packaging technology, graphite molds are used to carry and fix semiconductor chips, ensuring that the chips can stably bond with other components during the sintering process at high temperatures and specific atmosphere, achieving the packaging purpose.
Features:
1. Excellent thermal conductivity: Graphite has extremely high thermal conductivity, which can quickly transfer heat to the mold surface, helping to ensure uniform heating of the product during sintering and improve product quality.
2. Good chemical stability: Graphite can resist the erosion of various chemicals, ensuring stable performance in complex packaging environments.
3. Strong wear resistance: Graphite has high hardness and good wear resistance, and can withstand long time and frequent sintering operations, extending their service life.
4. Good processing performance: Graphite are easy to be machined, and can be customized in different shapes and sizes according to different packaging requirements.
Technical Data of Graphite Material:
Isostatic Graphite
| Property |
KBD-5 |
KBD-6 |
KBD-7 |
KBD-7B |
KBD-8 |
Unit |
| Apparent Density |
1.85 |
1.90 |
1.82 |
1.82 |
1.90 |
g/cm3 |
| Max Grain Size |
13-15 |
8-10 |
8-10 |
13-15 |
8-10 |
µm |
| Ash value |
≤500 |
≤500 |
≤500 |
≤500 |
≤500 |
ppm |
| Specific Electrical Resistivity |
8-10 |
8-9 |
11-13 |
11-13 |
11-13 |
μΩm |
| Flexural Strength |
46 |
55 |
51 |
59 |
60 |
Mpa |
| Compressive Strength |
85 |
95 |
115 |
121 |
135 |
Mpa |
| Shore Hardness |
48 |
53 |
65 |
70 |
70 |
HSD |
| Thermal Expansion (room temperature to 600ºC) |
4.75 |
4.8 |
5.8 |
5.8 |
5.85 |
10-6/ºC |
Molded Graphite
| Property |
KBG-4 |
KBG-5 |
Unit |
| Apparent Density |
≥1.80 |
≥1.85 |
g/cm3 |
| Ash value |
≤500 |
≤500 |
ppm |
| Shore Hardness |
≥40 |
≥45 |
HSD |
| Specific Electrical Resistivity |
≤12 |
≤12 |
μΩm |
| Flexural Strength |
38 |
41 |
Mpa |
| Compressive Strength |
81 |
87 |
Mpa |
| Max Grain Size |
25 |
25 |
μm |
Vibration Graphite
| Property |
TSK |
GSK |
Unit |
| Apparent Density |
≥1.70 |
≥1.72 |
g/cm3 |
| Max Grain Size |
≤2 |
≤0.8 |
mm |
| Specific Electrical Resistivity |
8-10 |
≤8.5 |
μΩm |
| Flexural Strength |
≥12.5 |
≥15 |
Mpa |
| Compressive Strength |
≥28 |
≥35 |
Mpa |
| Porosity |
≤24 |
≤20 |
% |
| Ash value |
≤0.3 |
≤0.3 |
% |
ASH can be purified into 50 ppm, 20 ppm or lower.
Advanced Production Equipments
Strict Quality Control Ensures High Quality Products
Safe Packing
Question and Answer:
Q:Are you a manufacturer or trading company?
A:We are a manufacture for graphite material and graphite machined products.
Q:How can you gurantee the quality?
A:We have the most advanced equipments in our lab and professional quality control team.We can gurantee each batch of the product with the stable quality.
Q:Can you offer samples?
A: Yes, we offer samples to test
Q: Delivery time?
A:Around 10 days.
Q: Shipping port
A: Tianjin or main port in China
Q:Payment terms
A:T/T,LC at sight
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